absolute maximum ratings parameter units i d @ v gs = -12v, t c = 25c continuous drain current -11 i d @ v gs = -12v, t c = 100c continuous drain current -7.0 i dm pulsed drain current ? -44 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 190 mj i ar avalanche current ? -11 a e ar repetitive avalanche energy ? 7.5 mj dv/dt p eak diode recovery dv/dt ? -10 v/ns t j operating junction -55 to 150 t stg storage temperature range package mounting surface temperature 300 ( for 5s) weight 2.6 (typical) g pd - 90886c pre-irradiation international rectifier?s rad-hard hexfet tm technol- ogy provides high performance power mosfets for space applications. this technology has over a de- cade of proven performance and reliability in satellite applications. these devices have been character- ized for both total dose and single event effects (see). the combination of low rds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters. o c a 2/20/03 www.irf.com 1 smd-1 product summary part number radiation level r ds(on) i d irhn9130 100k rads (si) 0.3 ? -11a IRHN93130 300k rads (si) 0.3 ? -11a features: single event effect (see) hardened low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed ceramic package surface mount light weight for footnotes refer to the last page radiation hardened irhn9130 power mosfet 100v, p-channel surface mount (smd-1) rad-hard ? hexfet ? t echnology
irhn9130 pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -100 ? ? v v gs = 0v, i d =-1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? -0.1 ? v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.3 v gs = -12v, i d = -7.0a ? resistance ? ? 0.325 ? v gs = -12v, i d = -11a ? v gs(th) gate threshold voltage -2.0 ? -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 2.5 ? ? s ( ) v ds >-15v, i ds = -7.0a ? i dss zero gate voltage drain current ? ? -25 v ds = -80v ,v gs =0v ? ? -250 v ds = -80v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? -100 v gs = -20v i gss gate-to-source leakage reverse ? ? 100 v gs = 20v q g total gate charge ? ? 45 v gs =-12v, i d = -11a q gs gate-to-source charge ? ? 10 nc v ds = -50v q gd gate-to-drain (?miller?) charge ? ? 25 t d (on) turn-on delay time ? ? 30 v dd = -50v, i d = -11a, t r rise time ? ? 50 v gs =-12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 70 t f fall time ? ? 70 l s + l d total inductance ? 4.0 ? c iss input capacitance ? 1200 ? v gs = 0v, v ds = -25v c oss output capacitance ? 300 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 74 ? na ? nh ns a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 1.67 r thj-pcb junction-to-pc board ? 7.5 ? soldered to a 1? square copper-clad board source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? -11 i sm pulse source current (body diode) ? ? ? -44 v sd diode forward voltage ? ? -3.0 v t j = 25c, i s = -11a, v gs = 0v ? t rr reverse recovery time ? ? 250 ns t j = 25c, i f = -11a, di/dt -100a/ s q rr reverse recovery charge ? ? 0.84 c v dd -50v ? t on forward tu rn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page c/w measured from the center of drain pad to center of source pad
www.irf.com 3 pre-irradiation irhn9130 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter 100k rads(si) 1 300k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -100 ? -100 ? v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward ? -100 ? -100 na v gs = -20v i gss gate-to-source leakage reverse ? 100 ? 100 v gs = 20 v i dss zero gate voltage drain current ? -25 ? -25 a v ds =-80v, v gs =0v r ds(on) static drain-to-source ? ? 0.3 ? 0.3 ? v gs = -12v, i d =-7.0a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 0.3 ? 0.3 ? v gs = -12v, i d =-7.0a on-state resistance (smd-1) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the t o-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part number irhn9130 2. part number IRHN93130 fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. table 2. single event effect safe operating area for footnotes refer to the last page v sd diode forward voltage ? ? -3.0 ? -3.0 v v gs = 0v, i s = -11a -120 -100 -80 -60 -40 -20 0 0 5 10 15 20 vgs vds cu br i n o i t e l ) ) 2 m c / g m ( / v e m y g r e n e ) v e m ( e g n a r ) m ( ) v ( s d v v 0 = s g v @v 5 = s g v @v 0 1 = s g v @v 5 1 = s g v @v 0 2 = s g v @ u c8 25 8 23 40 0 1 -0 0 1 -0 0 1 -0 7 -0 6 - r b8 . 6 35 0 39 30 0 1 -0 0 1 -0 7 -0 5 -0 4 - i9 . 9 55 4 38 . 2 30 6 - ????
irhn9130 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics - - 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source volta g e (v) -i , drain-to-source current (a) ds d -5.0v 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -15v -12v -10v -9.0v -8.0v -7.0v -6.0v -5.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -5.0v 1 10 100 5 6 7 8 9 10 11 12 13 v = -50v 20 s pulse width ds -v , gate-to-source volta g e (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -11a
www.irf.com 5 pre-irradiation irhn9130 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 400 800 1200 1600 2000 -v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c rss c oss c iss 0 10 20 30 40 50 60 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -11a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 100 0.0 1.0 2.0 3.0 4.0 5.0 -v ,source-to-drain volta g e (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds ( on ) sin g le pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms
irhn9130 pre-irradiation 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f v gs 25 50 75 100 125 150 0 2 4 6 8 10 12 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. dut y factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse ( thermal response )
www.irf.com 7 pre-irradiation irhn9130 fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v fig 13a. basic gate charge waveform q g q gs q gd v g charge -12v fig 13b. gate charge test circuit d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - -12v v gs 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -4.9a -7.0a -11a
irhn9130 pre-irradiation 8 www.irf.com foot notes: case outline and dimensions ? smd-1 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 02/03 ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = -25v, starting t j = 25c, l=3.1mh peak i l = -11a, v gs =-12v ? i sd -11a, di/dt -480a/ s, v dd -100v, t j 150c ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. -80 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. p ad assignments
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